Our collaborative paper led by Dr. Scott Chambers at Pacific Northwest National Laboratory studying the electronic band alignment and interfacial behavior at the epitaxial SrTiO3/p-Ge interface has been published in Applied Physics Letters. Using molecular beam epitaxy of SrTiO3 was grown on a p-doped Ge substrate and characterized using x-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy. Because STO is naturally n-type and Ge is doped p-type, this creates a p–n junction that can be used for visible light photocatalysis. The STO layer may provide chemical protection for the Ge substrate, which has a small enough band gap to absorb all wavelengths of visible light.