A collaborative paper led by Arka Sardar in Prof. Sarit Dhar’s group is out in Applied Physics Letters. This work focuses on ion implantation of Si into Ga2O3 films grown by molecular beam epitaxy at Air Force Research Lab. The results showed that by performing ion implantation at high temperatures defects in the films could be reduced and dopant ions were activated more readily. This important work was chosen as an Editor’s Pick in APL. It was supported in part by our AFOSR grant and NSF-funded Rigaku XRD. Congrats Arka!